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| SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 MARCH 96 FEATURES * 60 Volt VDS * RDS(on)=5 PARTMARKING DETAIL: COMPLEMENTARY TYPE: ZVP2106 ZVN2106G ZVP2106G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -1 5 150 100 60 20 7 15 12 15 -60 -1.5 -3.5 20 -0.5 -100 SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -60 -450 -4 20 UNIT V mA A V W C 2 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). MAX. UNIT CONDITIONS. V V nA A A ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125C(2) VDS=-18 V, VGS=-10V VGS=-10V,ID=-500mA VDS=-18V,ID=-500mA A Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf mS pF pF pF ns ns ns ns VDS=-18V, VGS=0V, f=1MHz VDD -18V, ID=-500mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 426 ZVP2106G TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) -3.5 -3.0 -2.5 -12V -2.0 -10V -1.5 -1.0 -0.5 0 0 -10 -20 -30 -40 -9V -8V -7V -6V -5V -4V -50 VGS= -20V -18V -14V -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 VGS= -10V -9V -8V -7V -6V -5V -4V -3.5V -10 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics ID(On)-On-State Drain Current (Amps) Saturation Characteristics -10 VDS-Drain Source Voltage (Volts) -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 VDS=-10V -8 -6 -4 ID= -1A -0.5A -0.25A -2 0 0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance () VGS=-5V -7V -8V -9V -10V 2.6 Transfer Characteristics 10 -6V Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 Dr n) (o DS 5 R ce an ist es R ce ur So nai VGS=-10V ID=-0.5A Gate Thresh old VGS=VDS ID=-1mA Voltage VG S(t h) 1 -0.1 -1.0 -2.0 20 40 60 80 100 120 140 160 180 ID-Drain Current (Amps) Tj-Junction Temperature (C) On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3 - 427 ZVP2106G TYPICAL CHARACTERISTICS 300 300 gfs-Transconductance (mS) gfs-Transconductance (mS) 250 200 150 100 50 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 VDS=-10V 250 200 150 100 50 0 0 -2 -4 -6 VDS=-10V -8 -10 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage 100 80 VGS-Gate Source Voltage (Volts) 0 -2 -4 -6 -8 -10 -12 -14 -16 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS= -20V -30V -50V C-Capacitance (pF) 60 Ciss 40 20 0 0 -10 -20 -30 -40 Coss Crss -50 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 428 |
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